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▼ TitleAuthors▼ Journal/Conference▲ YearDownload
Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers N.E.Grant, F.E.Rougieux, D.Macdonald Solid State Phenomena 2016 (829KB)
Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy H.T.Nguyen, Y.Han, M.Ernst, A.Fell, E.Franklin, D.Macdonald Applied Physics Letters 2015 (1.0MB)
Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon C.Sun, A.Y.Liu, S.P.Phang, F.E.Rougieux, D.Macdonald Journal of Applied Physics 2015 (1.4MB)
Silicon Ingot Characterization by Quasi-Steady-State Photoconductance M.Goodarzi, D.Macdonald, B.Mitchell, R.A.Sinton NREL Workshop 2015
Effects of solar cell processing steps on dislocation luminescence in multicrystalline silicon H.T.Nguyen, F.E.Rougieux, F.Wang, D.Macdonald SiliconPV 2015 (606KB)
Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon P.Zheng, F.E.Rougieux, D.Macdonald, A.Cuevas IEEE PVSC 2014 2014 (835KB)
Towards industrial advanced front-junction n-type silicon solar cells Y.Wang, C.Samundsett, T.Kho, J.McKeon, L.Black, D.Macdonald, A.Cuevas, J.Sheng, Y.Sheng, S.Yuan, C.Zhang, Z.Feng, P.J.Verlinden IEEE PVSC 2014 2014 (526KB)
Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers S. Y. Lim, M. Forster M, X. Zhang X, J. Holtkamp, M.C. Schubert, A. Cuevas, D. Macdonald IEEE journal of Photovoltaics, Volume: PP Issue: 99 Page: 1-7 2013 (903KB)
Physical model of back line-contact front-junction solar cells Andres Cuevas Journal of Applied Physics 113, 164502 (2013) 2013 (1.5MB)
Theory of the circular closed loop antenna in the terahertz, infrared, and optical regions A. F. McKinley, T. P. White, K. R. Catchpole AIP Journal of Applied Physics 2013 (2.0MB)

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