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▼ TitleAuthors▼ Journal/Conference▲ YearDownload
Theory of the circular closed loop antenna in the terahertz, infrared, and optical regions A. F. McKinley, T. P. White, K. R. Catchpole AIP Journal of Applied Physics 2013 (2.0MB)
Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging S. Y. Lim, M. Forster, D. Macdonald Journal of Crystal Growth 364, 67-73 (2013). 2013 (1.3MB)
Trade-offs between impurity gettering, bulk degradation, and surface passivation of boron rich layers on silicon solar cells Sieu Pheng Phang, Wensheng Liang, Bettina Wolpensinger, Michael Andreas Kessler and Daniel Macdonald IEEE Journal of Photovoltaics 3 (1), pp. 261 - 266 (2013). 2013 (575KB)
Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers S. Y. Lim, M. Forster M, X. Zhang X, J. Holtkamp, M.C. Schubert, A. Cuevas, D. Macdonald IEEE journal of Photovoltaics, Volume: PP Issue: 99 Page: 1-7 2013 (903KB)
Physical model of back line-contact front-junction solar cells Andres Cuevas Journal of Applied Physics 113, 164502 (2013) 2013 (1.5MB)
Laser-assisted shunt removal on high-efficiency silicon solar cells Ngwe Zin, Andrew Blakers, Keith McIntosh, Evan Franklin, Teng Kho, Kean Chern, Johnson Wong, Thomas Mueller, Armin G. Aberle, Zhiqiang Feng, and Qiang Huang 27th European Conference on Photovoltaic Solar Energy Conversion (EUPVSEC), Frankfurt, Germany 2012 (549KB)
Detection and reduction of iron impurities in silicon solar cells MacDonald, Daniel, Phang, Sieu Pheng, LIU, An Yao International Symposium on Advanced Science and Technology of Silicon Materials 2012 2012
Isotextured silicon solar cell analysis and modeling 1: Optics Baker-Finch, Simeon, McIntosh, Keith, Terry, Mason L IEEE Journal of Photovoltaics 2012
Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imaging A. Y. Liu, D. Walter, S. P. Phang and D. Macdonald IEEE Journal of Photovoltaics, 2 (4), pp. 479-484 (2012). 2012 (1.1MB)
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron Forster, Maxime, Fourmond, E, Rougieux, Fiacre, Cuevas, Andres, Gotoh, R, Fujiwara, K., Uda, S, Lemiti, M Applied Physics Letters 2012

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