"Acceptor-related metastable defects in compensated n-type silicon" followed by "Dopant and carrier concentration imaging of silicon wafers by a photoluminescence technique"

Dr Fiacre Rougieux and Siew Yee Lim (Research School of Engineering)

SOLAR SEMINAR SERIES

DATE: 2012-10-25
TIME: 10:00:00 - 11:00:00
LOCATION: Graduate Teaching Room (Ian Ross Building)
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ABSTRACT:
This paper reviews the theory of metastable defect formation in compensated n-type silicon. By means of minority carrier lifetime measurements before and after defect activation we investigate the impact of 3 potential metastable defects relevant to the solar industry: Iron-boron pairs, chromium-boron pairs and the boron-oxygen defect.